Suraj k patil

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1 USB2 Semiconductor device and method of fabricating the same Publication/Patent Number: USB2Publication DateApplication Number: 15/,Filing Date: Inventor: Wiseman, Joseph W   Patil, SurajK  Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: H01L21/ Abstract: A semiconductor device includes a gate electrode disposed on a fin, a gate spacer disposed on the fin and a sidewall of the gate electrode, a source/drain electrode disposed on the fin, and an air pocket structure interposed between the gate spacer and the source/drain electrode. The air pocket structure includes an air gap, a first sidewall, a top sealing, a second sidewall and a bottom sealing. The air gap is enclosed by the first sidewall, the top sealing, the second sidewall and the bottom sealing arranged in a clockwise sequence. The top sealing and the bottom sealing include the same material of an energy removable material. 2 KRA SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Publication/Patent Number: KRAPublication DateApplication Number: Filing Date: Inventor:Patil, SurajK  Wiseman, Joseph W   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: H01L29/49 Abstract:반도체 장치는 핀(fin) 상에 배치된 게이트 전극, 핀 및 게이트 전극의 측벽부에 배치된 게이트 스페이서, 핀 상에 배치된 소오스/드레인 전극, 및 게이트 스페이서와 소오스/드레인 전극 사이에 개재(interpose)된 에어 포켓(air pocket) 구조물을 포함한다. 에어 포켓 구조물은 에어 갭(air gap), 제1 측벽부, 상부 실링(sealing)부, 제2 측벽부 및 하부 실링부를 포함한다. 에어 갭은 시계 방향으로 배치된 제1 측벽부, 상부 실링부, 제2 측벽부 및 하부 실링부에 의해 둘러싸인다. 상부 실링부 및 하부 실링부는 에너지 제거 가능 물질(energy removable material)에 해당하는 동일 물질을 포함한다. 3 USB1 Integration of gate structures and spacers with air gaps Publication/Patent Number: USB1Publication DateApplication Number: 15/,Filing Date: Inventor:Patilsurajk  Singh, Jagar   Assignee: GLOBALFOUNDRIES Inc.   IPC: H01L29/49 Abstract: Structures for a field-effect transistor and methods for forming a field-effect transistor. The structure includes a gate structure having a sidewall and a sidewall spacer arranged adjacent to the sidewall of the gate structure. The sidewall spacer includes an energy removal film material and one or more air gaps in the energy removal film material.
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  • Kunal PalKunal PalNational Institue of Technology, RourkelaVerified email at
  • D N TibarewalaD N TibarewalaFormer Professor of Biomedical Engineering, Jadavpur University, Kolkata , INDIA.Verified email at
  • Uvanesh KasiviswanathanUvanesh KasiviswanathanInstitute Post-Doctoral Fellow, Indian Institute of Technology Madras (IIT-M), Chennai.Verified email at
  • Goutam Thakur, PhDGoutam Thakur, PhDAssociate Professor, Department of Biomedical Engineering, Manipal Institute of Technology, MAHEVerified email at
  • Preetam SarkarPreetam SarkarNational Institute of Technology RourkelaVerified email at
  • Arindam BitArindam BitAssistant Professor of Department of Biomedical Engineering, NIT RaipurVerified email at
  • SHARAN RATHNAMSHARAN RATHNAMDepartment of Biotechnology and Medical Engineering National Institute of Technology RourkelaVerified email at
  • Irshaan SyedIrshaan SyedNational Institute of Technology, RourkelaVerified email at
  • A. ThirugnanamA. ThirugnanamAssociate Professor, Department of Biotechnology and Medical Engineering, National Institute ofVerified email at
  • SenthilguruSenthilguruPostdoc, Indian Institute of Technology DelhiVerified email at
  • Dr.Sarada Prasanna MallickDr.Sarada Prasanna MallickAssistant Professor, Department of Biotechnology, Koneru Lakshmaiah Education FoundationVerified email at
  • Minerva SarmaMinerva SarmaB.Tech Biomedical Engg. StudentVerified email at
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